Description
The FQP7N60C N-Channel Power MOSFET is a high-performance 600V, 7A switching transistor designed for efficient power conversion and high-voltage applications. Featuring fast switching speed, low gate charge, and rugged avalanche capability, it is ideal for switch-mode power supplies (SMPS), inverters, motor drives, LED drivers, and industrial power control circuits.
| Specification | Details |
|---|---|
| Product Name | FQP7N60C Power MOSFET |
| MOSFET Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 600V |
| Continuous Drain Current (ID) | 7A |
| Pulsed Drain Current (IDM) | 28A (Typical) |
| Drain-Source ON Resistance (RDS(on)) | 1.0 Ω (Max @ VGS = 10V) |
| Gate-Source Voltage (VGS) | ±30V |
| Gate Charge (Qg) | 29 nC (Typical) |
| Package | TO-220 |
| Mounting Type | Through-Hole |
| Power Dissipation | Up to 142W (Tc = 25°C) |
| Operating Junction Temperature | -55°C to +150°C |
| Switching Speed | Fast Switching |
| Technology | Planar Stripe DMOS |
| Features | Low gate charge, avalanche tested, improved dv/dt capability, high efficiency |
| Applications | SMPS, AC-DC converters, DC-DC converters, motor drives, LED drivers, UPS systems, inverters, battery chargers, industrial automation, power control circuits |
Reviews
There are no reviews yet.