IRF3205 MOSFET

Fr 1,000

The IRF3205 MOSFET is a rugged, high-current N-channel transistor built for applications that demand efficient, reliable power switching. With its ultra-low on-resistance and excellent current-handling capability, it’s ideal for motor drivers, DC-DC converters, battery systems, and high-power load control.

5 in stock

SKU: 555 Category:

The IRF3205 MOSFET is a rugged, high-current N-channel transistor built for applications that demand efficient, reliable power switching. With its ultra-low on-resistance and excellent current-handling capability, it’s ideal for motor drivers, DC-DC converters, battery systems, and high-power load control.


Why This MOSFET Stands Out

  • Very High Current Capacity: Can handle extremely high drain current (up to around 110 A under ideal conditions).

  • Strong Voltage Rating: Supports drain-source voltages up to 55 V.

  • Ultra-Low On-Resistance: RDS(on) is around 0.008 Ω, resulting in minimal heat generation and higher efficiency.

  • High Gate Voltage Tolerance: With a ±20 V VGS limit, it offers flexibility in driver circuitry.

  • Fast Switching Performance: Great for PWM motor control, DC-DC converters, inverters, and high-frequency switching systems.

  • Thermally Robust: Works reliably from –55°C to +175°C with good thermal dissipation characteristics.

  • Avalanche Rated: Withstands voltage spikes and sudden energy surges, making it durable in inductive load environments.

  • Easy Integration: Comes in a TO-220 package that is simple to mount and cool.


Perfect For…

  • Motor drivers (DC motors, pumps, fans)

  • Inverters and solar power systems

  • Battery management and high-current switching

  • RC vehicles, robotics, and DIY electronics

  • Power supplies and converters

  • Automotive 12 V/24 V applications

  • High-power LED dimmers and heaters


Key Specifications

  • Type: N-Channel Power MOSFET

  • Continuous Drain Current (ID): ~110 A (with proper cooling)

  • Drain-Source Voltage (VDS): 55 V

  • On-Resistance (RDS(on)): approx. 8 mΩ

  • Gate-Source Voltage (VGS max): ±20 V

  • Power Dissipation: Up to ~200 W with heatsink

  • Package: TO-220

  • Operating Temperature Range: –55°C to +175°C

  • Gate Charge (Qg): approx. 97 nC


Practical Tips for Best Use

  • Drive the gate properly: Use a 10 V gate drive for full enhancement and minimal on-resistance.

  • Use a heatsink: At high current, proper cooling is essential for safe operation.

  • Protect against inductive loads: Add flyback diodes or snubbers when switching motors, coils, or solenoids.

  • Short, thick wiring: Reduces resistance and heating in high-current paths.

  • Add a gate resistor: Helps control switching speed, reduce noise, and limit inrush current.

  • Parallel MOSFETs carefully: Ensure matched devices and proper layout if combining for higher current.


Final Thought

The IRF3205 is a trusted, high-performance MOSFET that delivers exceptional efficiency and durability in demanding power applications. Whether you’re building a motor controller, inverter, or any high-current system, this MOSFET offers the strength, speed, and stability needed for professional-grade results.

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