Description
The IRFB4110PBF N-Channel Power MOSFET delivers outstanding high-current switching performance with a 100V drain-source voltage, up to 180A continuous drain current, and ultra-low ON resistance. Ideal for motor controllers, DC-DC converters, battery management systems, power supplies, inverters, and other high-efficiency power electronics applications.
Technical Specifications
| Specification | Details |
|---|---|
| Product Name | IRFB4110PBF Power MOSFET |
| MOSFET Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | Up to 180A (package dependent) |
| Drain-Source ON Resistance (RDS(on)) | 4.5 mΩ (Max) |
| Gate Charge (Qg) | 150 nC (Typical) |
| Package | TO-220AB |
| Mounting Type | Through-Hole |
| Power Dissipation | Up to 370W |
| Operating Temperature | -55°C to +175°C |
| Technology | HEXFET® Power MOSFET |
| RoHS Compliance | Yes |
| Applications | Motor controllers, BLDC drivers, DC-DC converters, switching power supplies, UPS systems, battery management, solar inverters, industrial power control |
| Features | Low ON resistance, high current capability, fast switching, avalanche rugged, high efficiency, lead-free package |
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